手机彩票网,计划网址彩票平台,365bet体育网址,华体会手机版app信誉好,金沙app下载,ob欧宝全站官方网站,极速快三

Your Position: Home > Support > Service Center

Microsoft joined a new generation of DRAM groups of HMCC reason

2012/8/16??????view:

  In May 8, 2012, promote the use of TSV ( TSV ) 3D laminated to a new generation of DRAM " Hybrid Memory Cube ( HMC ) Hybrid Memory Cube Consortium " popularity ( HMCC ) announced that the United States, software giant Microsoft has joined the association.

  HMC is the three-dimensional structure, the logic chip along the vertical direction superposition of multiple DRAM chips, and then through the TSV connection wiring technology. HMC 's biggest characteristic is compared with existing DRAM, performance can be greatly improved. The reasons there are two, one is between chips from semiconductor package wiring distance on a board on the traditional methods of " cm " units are substantially reduced to dozens ofμ m~ 1mm; two is on a chip to form 1000 to tens of thousands of TSV, realize the multipoint connection chip.

  Microsoft 's accession to the HMCC, because we are considering how to corresponding is likely to become a personal computer and a computer to improving the performance of " memory bottleneck " problem. Memory bottleneck refers to as the microprocessor performance through multiple nucleation and constantly improve, the architecture of the DRAM performance will not be able to meet the need of processor. If do not solve this problem, can occur even if the computer new product, the actual performance is also not appropriate promotion situation. Compared with it, if the TSV based on the application of HMC in computer main memory, the data transmission speed can be increased to the current DRAM is about 15 times, therefore, is not just a giant Microsoft, American companies such as Intel are also active in research using HMC.

  In fact, plans to use TSV not only for HMC and other DRAM products. According to the semiconductor manufacturers plan, in the next few years, borne from electronic equipment input function of the CMOS sensor to the responsible for the operations of FPGA and multi core processor, and in charge of product storage of DRAM and NAND flash will have to import TSV. If the plan goes ahead, TSV will assume the input, operation, storage and other electronic equipment main function.

河西区| 延津县| 镇康县| 萨嘎县| 铁岭市| 合江县| 关岭| 明溪县| 靖安县| 瑞丽市| 太仆寺旗| 康乐县| 海门市| 确山县| 湾仔区| 冀州市| 万盛区| 莱西市| 蒙山县| 莱西市| 岱山县| 体育| 九台市| 孝昌县| 青阳县| 砀山县| 阿图什市| 平泉县| 仲巴县| 合山市| 大同县| 兰考县| 永吉县| 社旗县| 石林| 中方县| 运城市| 南汇区| 汝阳县| 浙江省| 忻城县|